February 2018

LoTIS Debut Celebrated

zeroK's LoTIS brightness measurements appeared in the premier issue of the new high-impact journal Nano Futures. Now this publication has been honored as one of 11 articles highlighted in the first anniversary issue!

November 2017

zeroK at ISTFA 2017

zeroK participated in the FIB user group as part of The International Symposium for Testing and Failure Analysis (ISTFA). zeroK presented its latest results and discussed some of the benefits LoTIS may offer to members of this community. These include better machining acuity and reduced levels of primary-beam invasiveness.

October 2017

zeroK Booth at AVS-64 Meeting

zeroK's at AVS64

zeroK presented its latest results and spoke with experts in the FIB and SIMS communities at The 64th meeting of the American Vacuum Society in Tampa, Florida Oct 31st. Thank you everyone for coming out to say hello!

Our booth was part of zeroK's outreach to the lead customers and users who will be among the first to reap the benefits of LoTIS-FIB instrumentation. Since last year when we debuted the technology we have demonstrated 4x higher brightness as well as quantitative spot size performance data from 1 pA to 1 nA with a 10kV beam.

May 2017

New article on zeroK's LoTIS

A new article was just published on nanotechweb.org highlighting the utility of zeroK's LoTIS. It provides a quick overview of our technology, its applications, and our recent publication.

May 2017

Now looking for lead users

We are proud to announce that zeroK's LoTIS is now available to be deployed to key lead users. If you are interested in being one of the first outside users of this new technology and would like to discuss acquiring a LoTIS-equipped FIB system or a retrofit of your existing gallium FIB system please contact us.

May 2017

Latest publication released, LoTIS 2x brighter

The performance of the alpha continues to be refined. Recent upgrades have enabled a doubling of the ion source brightness compared with the results we reported in November. This means we can provide more current into smaller spots for our end users.

Our most recent results are detailing this work are now available in the premier issue of a brand new high-impact, rapid-release IOP journal Nano Futures. The article is open access so you don't need a subscription.

January 2017

A look ahead

zeroK is looking forward to a very exciting 2017. With an intial demonstration of our technology complete we aim to begin rolling out deployments to lead users. If you would like to discuss how this technology could benefit your application please contact us.

January 2017

zeroK in the News

Excitement is building in anticipation of new focused ion beams powered by LoTIS. Here's what industry watchers are saying:

SemiEngineering.com: "zeroK NanoTech is putting a new and innovative twist on FIB"

Chemical and Engineering news: "Laser-Cooling is Changing the Ion-Beam Game"

Allied Market Research: zeroK a key player in FIB market outlook

November 2016

zeroK debuts LoTIS at AVS 63

Tin on Carbon Imaged by LoTIS

The first results from the Low Temperature Ion Source (LoTIS) prototype are in. These conclusively demonstrate that our proprietary technology delivers a cesium ion beam with a brightness a factor of ten higher than the gallium liquid metal ion source. zeroK has already used this very high brightness to demonstrate spot sizes of 2 nm with a 1 pA beam at only a 10 kV beam energy!

To the right is an image of nano-sized tin spheres at a 10 µm field-of-view, taken with LoTIS.

January 2016:

Award of NSF SBIR Phase IIB Grant

zeroK has been awarded significant additional funding from the National Science Foundation. The Phase IIB grant was earned due to the significant investment zeroK received from a major semiconductor manufacturer in May of 2015. These funds will be used to further support zeroK's R&D effort to commercialize the Company's ion source technology.

September 2015:

Move to New Lab Facilities

zeroK Signage

zeroK has moved into its new lab space at 401 Professional Dr, Suite 125 in Gaithersburg, MD. This facility will provide the space needed to continue developing the Company's ion source technology and complete construction of an alpha prototype FIB instrument. Please feel free to contact zeroK for a tour if you are in the area.

July 2015:

Presence at SEMICON West 2015

zeroK will be featured in the Silicon Innovation Village of this year's SEMICON West. Along with other small startups zeroK will demonstrate how it's innovations will enhance the capabilities of semiconductor manufacturers. Please stop by booth IS12 if you are attending!

May 2015:

zeroK Begins Collaborative Research Effort with Major Semiconductor Company

zeroK has begun a major collaborative project with a semiconductor manufacturer to produce the first 'alpha' stage tool featuring LoTIS technology. When complete this instrument will demonstrate our ion source's capabilities in a focused ion beam system for the first time. This investment demonstrates the value LoTIS stands to bring to end-users in the semi space.

March 2014:

NSF SBIR Phase II Grant Awarded

zeroK has been awarded a Small Business Innovation Research (SBIR) Phase II grant from the National Science Foundation (NSF). The award is based on strong commercial potential for Low Temperature Ion Source (LoTIS) technology and follows a successful SBIR Phase I research program. The Phase II support will contribute to further development of zeroK's LoTIS technology in collaboration with the National Institute of Standards and Technology's Center for Nanoscale Science and Technology.

August 2013:

Presentation at Microscopy and Microanalysis Meeting

zeroK will be attending the 2013 Microscopy and Microanalysis conference in Indianapolis to report on the technical progress on its ion source technology. If you will be attending, please stop by poster PD-5 on Monday, August 5th.

July 2013:

Paper Publication

Together with collaborators at the National Institute of Standards and Technology (NIST), zeroK recently published a paper on its low-temperature ion source (LoTIS) in the Journal of Applied Physics. This publication makes clear the enormous potential of this technology to improve focused ion beam performance by providing modeling and measurement results of LoTIS brightness and energy spread.

May 2013:

NSF Phase IB SBIR Supplement Awarded

zeroK NanoTech has been awarded additional funds from the NSF to support the commercialization of its low-temperature ion source (LoTIS) technology. Receipt of this award was based on zeroK's success in showing real interest in its technology from industrial end-users. The funds will be used to further explore how zeroK's LoTIS can address a wide variety of focused ion beam tasks.

April 2013:

Early Investment from Lead User

A leading semiconductor manufacturer is now supporting the continued development of zeroK's low-temperature ion source (LoTIS) technology. Improved focused ion beams will help end-users in the semiconductor industry by enabling them to bring their cutting edge products to market more quickly and more cheaply. zeroK is pleased to have the opportunity to demonstrate the applicability of its technology to solving problems pertinent to this most important class of end-users.

December 2012:

NSF SBIR Phase I Grant Awarded

Based upon the strength of its research and commercialization plan, zeroK was awarded a Small Business Innovation Research (SBIR) phase one grant from the National Science Foundation (NSF). The grant funding will be used to investigate the capabilities of zeroK's LoTIS in collaboration with the National Institute of Standards and Technology's Center for Nanoscale Science and Technology.

April, 2012:

zeroK Wins Business Plan Competition

zeroK took home a first place finish and $10K in University of Maryland´┐Żs 2012 business plan competition. Facing off against 91 other early stage companies, they went home with the top prize in the Grad Student, Post-Doc, and Faculty category.

zeroK would like to thank the organizers, faculty and staff at UMD for supporting entrepreneurship and making the contest possible. zeroK would also like to thank Howard Pedolsky, Dr. Gary Robinson and the instructors of the INNoVATE program.